【摘要】 本文研究Si⁺室温深注入（150～160keV,1～3×10¹5/cm²）SOS中600+1050℃两步退火固相外延再生长改善SOS膜界面附近结晶质量和Si⁺室温浅注入(85keV,3×10¹⁵/cm²)SOS中600+1050℃两步退火固相外延再生长改善SOS膜表面结晶质量的工艺.180keVH⁺沟道效应—背散射测量表明,两步Si⁺注入和两步退火团相外延再生长工艺能够有效地改善SOS膜结晶质量°表面归一化最小产额x_o、界面最小产额x_i 和退道率dx/dz分别减小到0.06、0.12和0.19/μm.更多还原

【Abstract】 Improvements of SOS crystalline quality in the vicinity of the interface and on the surface have been studied by means of deep (150-160keV, 1 -1.4 × 1015/cm2) and shallow (85keV, 3×1015/cm2) Si+ implantation into SOS at room temperature and solid-phase epitaxial regrowth during two-step thermal annealing at 600℃ and 1050℃, respectively. It is clearly shown that this method has significantly improved the crystalline quality of SOS film through the measurement of 180keV H+ channeling effect back-scattering. Normalized minimum yields χ0 on the surface and χi in the interface andthe average dechanneling rate dx/dz are reduced to 0.06, 0.12 and 0.19/μm, respectively.更多还原