【摘要】 用椭圆偏振仪、俄歇电子能谱仪（AES）和X-光电子谱仪（XPS）等对经pH=7±0.05的H₂O₂-NH₄0H溶液化学腐蚀或用NH₄OH:H₂0=1:10和HCl:H₂O=1:1进行清洗后的GaAs表面残余氧化层厚度、折射率、纵向组分分布和Ga（3d）与As（3d）结合能变化等进行测定.三者实验结果对应很好.化学腐蚀后的GaAs表面有一层氧化物层,然后是氧化物与GaAs混合的过渡层,直至GaAs衬底.从NH₄OH:H₂O=1:10清洗后GaAs表面残余氧化层厚度,表面C吸附量和Ga/As的波动看,它均比用HCl:H₂O=1:1清洗为优,故用它作为GaAs在化学腐蚀后的清洗是可取的.更多还原

【Abstract】 The thickness, refraction index, vertical composition profiles and the change of Ga(3d) and As(3d) binding energy, etc, of the oxidized GaAs surface after chemical etching in pH= 7±0.05 H2O2-NH4OH solution or rinsing in HC1:H2O= 1:1 or NH4OH :H2O = 1:110 acquous solution are measured by an ellipsometry, Auger electron and X-ray photoemission spectroscopies. The experimental results from these three different measurements correspond well. After chemical etching, at the outermost surface thereis a thin oxide layer which is then followed by a transition layer composed of oxide and nonstoichiometric GaAs. The oxide layer and a part of transition layer can be moved away by rinsing in an acquous solution of HC1 or NH4OH. After rinsing in NH4OH acquous solution, the fluctuation of Ga/As ratio in the surface layer, the thickness of the residual oxidized layer and the C absorbability of the surface are less than those after in HC1 acquous solution, so it is acceptable to use NH4OH acquous solution as the rinsing reagent after chemical etching in the device technology.更多还原