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干法显影的电子束抗蚀剂——聚环己烯砜叠氮系
DRY DEVELOPING ELECTRON BEAM RESIST——POLYCYCLOHEXENE-SULFONE AZIDES
【摘要】 本文研究了用四氟化碳-氧等离子体进行干法显影的电子束刻蚀技术。负型电子束抗蚀剂是由聚环己烯砜和2,6-双-(4′-叠氮苯亚甲基)-4-甲基环己酮组成,其灵敏度为1.5×10-5C/cm2,分辨率小于1μm,反差约1.43。并讨论了干法显影的影响因素和机理。
【Abstract】 A dry developing electron beam resist was investigated. As a negative resist, it consists of PCHS (polycyclohexene sulfone) and diazide (2,6-di-(4’-azidobenzal)-4-methy-lcyclohexanone). It was found that PCHS-diazide resist has a sensitivity of 1.5×10-5 C/cm2, a resolution of less than 1 μm and the contrast of about 1.43. The mechanism and the influence factor of dry development were discussed.
- 【文献出处】 感光科学与光化学 ,Photographic Science and Photochemistry , 编辑部邮箱 ,1986年02期
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