【摘要】 本义研究了Al(Ⅲ)、Ga(Ⅲ)、In(Ⅲ)、Si(Ⅳ) 、Ge(Ⅳ )、Sn(Ⅳ)、Bo(Ⅲ)多元素的四苯基卟啉络合物的合成与光电效应。进一步完善和改进了Si(Ⅳ)、Ge(Ⅳ)、Bi(Ⅲ)四苯基卟啉络合物的合成方法。光电效应结果表明:这些主族元素的卟啉络合物比某些过渡金属卟啉具有较大的光生电压和光生电流。更多还原

【Abstract】 In the present paper studies were made on the syntheses and photoelectric effects of tetraphenylporphyrin complexes of elements Al(Ⅲ),Ga(Ⅲ)In(Ⅲ),Si(Ⅳ),Ge(Ⅳ),Sn(Ⅳ),Bi(Ⅲ).The results showed that the methods of syntheses of tetraphenylporphyrih complexes of Si(Ⅳ),Ge(Ⅳ),Bi(Ⅲ)were improved and the photoelectric effects of tetra-phenylporphyrin complexes of these elements were better than those of the tetraphenylphorphyrin complexes of the transition metals These good results were in accord with the stable electronic configurations(ns2np6 or nd10)of the central metal ions.Ge(Ⅳ)tetraphenylporphyrin gave the best result(0.78V and 1.6μA/cm2).The photovoltage of Ge(Ⅳ)was up to 1.15(with reference to the standard hydrogen electrode).In the present paper studies were made on the syntheses and photoelectric effects of tetraphenylporphyrin complexes of elements Al(Ⅲ),Ga(Ⅲ)In(Ⅲ),Si(Ⅳ),Ge(Ⅳ),Sn(Ⅳ),Bi(Ⅲ).The results showed that the methods of syntheses of tetraphenylporphyrih complexes of Si(Ⅳ),Ge(Ⅳ),Bi(Ⅲ)were improved and the photoelectric effects of tetra-phenylporphyrin complexes of these elements were better than those of the tetraphenylphorphyrin complexes of the transition metals These good results were in accord with the stable electronic configurations(ns2np6 or nd10)of the central metal ions.Ge(Ⅳ)tetraphenylporphyrin gave the best result(0.78V and 1.6μA/cm2).The photovoltage of Ge(Ⅳ)was up to 1.15(with reference to the standard hydrogen electrode).更多还原