【摘要】 本文提出了一个新的短沟道MOSFET准二维分析模型。在整个沟道中计入二维效应后,导出了一个包括非饱和区和饱和区的统一方程,消除了通常的两区模型由于将沟道分区所引起的误差。计算同实测结果相吻合。更多还原

【Abstract】 A new quasi-two-dimensional model for short-channel MOSFET’s is presented. Taking into account the two-dimensional effects throughout the channel, a unified equation valid in both the unsaturation and saturation regions is derived, and the problems resulting from dividing the channel into two regions in the conventional two-region models are solved. The calculated results are in excellent agreement with the experimental data.更多还原