【摘要】 本文实现了一种无隔离区的DYL MOS混合集成的新电路。考虑到多元逻辑电路的主要基本单元线性“与或’门和MOS集成电路的自隔离特点,只要对它的工艺过程稍加调整,即可在同一芯片上制成了互相隔离的适合线性“与或”门需要的大,小β晶体管和P沟道MOS晶体管。用这种集成技术,在N型硅片上试作了由双极晶体管和P沟道MOS晶体管组成的反相单元。这种电路工艺简单,可与DYL线性“与或”门在工艺上兼容,具有输入阻抗高、输出阻抗小,并可和DYL电路与TTL电路相容等优点。更多还原

【Abstract】 A new hybrid integrated circuit without isolation, DYLMOSIC, has been developed. By increasing and adjusting the technology, P channel MOS transistors and bipolar transistors with large β and small β value for the linear AND-OR gate in DYL are developed on the same wafer, based on the self-isolation characteristics among the linear AND-OR gates, the main logic unit in DYL, and MOSIC. Using the hybrid integrated technology, a inverter unit is constructured by bipolar and MOS transistors on the same N type silicon wafer. The benefits of DYLMOS hybrid integrated circuits are: simple and compatible technology with the linear AND-OR gate in DYL, high input and low output impedance and compatible level with DYL and TTL circuits.更多还原