【摘要】 本文用背散射技术、霍尔效应和X光衍射法测量As离子注入多晶Si浅结工艺在制备D.I2902电路中的基本参数:As在多晶Si中的扩散系数、电阻率、迁移率和晶粒大小。对影响电路参数的多晶Si与单晶Si之间的界面氧化层、多晶Si厚度和晶粒大小作了较详细的分析,指出极薄界面氧化层的存在影响As从多晶Si向单晶Si的扩散,也有利于发射效率的提高。最后给出D.I2902电路的工艺流程和基本电参数。更多还原

【Abstract】 The basic electrical parameters of D.I 2902 IC fabricated by polysilicon shallow juction technique with arsenic ion implantation are determined, including the diffusion coefficient, sheet resistivity, mobility and grain size of polysilicon. How the oxide layer at the interface between poly-and mono-crystalline silicon, thickness and grain size of polysilicon affect the electrical parameters of the IC is discussed in detail. The presence of an extremely thin oxide layer at the interface prevent the diffusion of arsenic ions from poly-to mono-crystalline silicon, and is favourable for the current gain of the IC. The basic electrical parameters of D.I 2902 and its technological process of fabrication are presented briefly.更多还原