节点文献
硅上硅化钛相变和生长动力学研究
INVESTIGATION OF PHASE CHANGE AND GROWTH KINETICS OF TITANIUM SILICIDE ON SILICON
【摘要】 用RBS及X线衍射研究了硅上钛薄膜退火时形成硅化物的相变和生长动力学。650℃退火形成TiSi2相,TiSi2层生长服从Kidon抛物线层生长规律。
【Abstract】 Phase change and growth kinetics of silicide of Ti thin film on silicon are investigated by means of RBS and X-ray diffraction. TiSi2 was formed during 650℃ thermal annealing. The growth of TiSi2 layer follows the Kidson parabolic layer growtb law.
- 【文献出处】 北京师范大学学报(自然科学版) ,Journal of Beijing Normal University(Natural Science) , 编辑部邮箱 ,1986年01期
- 【被引频次】1
- 【下载频次】39