【摘要】 通过熔体淬冷观察和X射线粉末衍射,测定了Ge-Ga-S系统的璃璃形成区。该系统的玻璃形成的成分范围为:Ge20～40,Ga0～15,S55～70（原子％）。测定了样品的一系列物理化学性质和玻璃的析晶性能。用X射线粉末衍射鉴定出晶相为Ga₂S₃,GeS和GeS₂。用光学显微镜和电子显微镜观察了样品的形貌,并进行了电子探针成分分析。玻璃的红外透过范围为0.46～11.5μm。测定了若干玻璃的喇曼光谱和红外吸收光谱,认为玻璃结构以[GeS₄]和[GaS₄]为主。更多还原

【Abstract】 The glass forming region of Ge-Ga-S glass: Ge 20-40, Ga, 0-15, S 55-70 (atom %) has been identified by using rapid quenching technique accompanied by X-ray powder diffraction analysis. The physicochemical properties together with the crystallization behavior of the glasses have been studied. The crystallized phases analysed by X-ray powder diffraction are Ga2S3 GeS and GeS2. Optical and electron microscopies have been used to observe the morp-hdogy of the samples. Electron probe has been applied to investigate the constitient. The IB transmission for the chalcogenide glasses is in the range 0.46~11.5 μm. The dominant structural unite of the glasses confirmed by IB and Raman Spectrum may be [GeS4] and更多还原