【摘要】 本文用椭偏光谱测量与阳极氧化剥层相结合的方法,测量了注入能量150keV、注入剂量在10¹³-10¹⁶cm^-2范围内的As⁺注入Si损伤层的光学性质,得到了光学常数n、k在损伤层内的分布,并用有效介质理论计算出损伤分布.所得损伤分布与损伤理论进行了比较,两者基本一致.更多还原

【Abstract】 The optical properties of As⁺ implanted Si layer have been measured by the spectroscopicellipsometry combined with anodization-stripping.The refractive index n and the extinctioncoefficient R profiles have been obtained for samples with implantation energy,of 150 keV anddoses of 6×10¹²,1.4×10¹⁴, 2×10¹⁴,6×10¹⁴ and 2×10¹⁵ions/cm².The damage profiles havealso been calculated by an effective medium theory from data of n, R profiles,and are in goodagreement with those predicted by Brice’s damage theory.Experimental results show that thereexist voids in the amorphous silicon formed by ion implantation,and there exists a special sur-face layer in the implanted region.It is found that the pseudo optical constant n and R pro-files show oscillating at longer wavelength region and are approximately equal to the real n,Rprofiles at shorter or middle （3600-5000A） region which is preferable for practical measure-ment.更多还原