【摘要】 用国产分子束外延设备生长出性能优良、表面平整光洁的GaAs。不掺杂的P型GaAs空穴浓度为 2-8×10¹⁴cm^-3,室温迁移率为360-400cm²/V·s.使用国产材料,纯度为 2N5并经我们“提纯”的 Be作为 P型掺杂剂.掺 Be的 P型GaAs空穴浓度范围从1.0 × 10¹⁵至6×10¹⁵cm^-3.其室温迁移率与空穴浓度的关系曲线与国外文献的经验曲线相符.当空穴浓度为1—2 ×10¹⁵cm^-3时,室温迁移率达 400cm²/V·s.低温（77K）迁移率为 3500—7000cm²/V·s.在4.2K下对不同空穴浓度的P型GaAs样品进行了光荣光测量和分析.更多还原

【Abstract】 High quality P-type GaAs films have been grown by a home made molecular beam epi-taxy system.Undoped GaAs films are found to be P type with free hole concentration （2-8）×10¹⁴cm^-3 and mobility 360-400 cm²/V.s at room temperature.P type GaAs films are do-ped with Be of 99.5% purity which has been "purified" by the authors.The mobilities as afunction of free hole concentrations ranging from 1.0×10¹⁵ to 6×10¹⁹ cm^-3 are in agreementwith the empirical curve at room temperature.P type GaAs films have been measured and stud-ied with photoluminescence at 4.2 K.更多还原