【摘要】 本文就Ar⁺激光辐照功率、衬底温度等因素对SOI结构再结晶多晶硅/二氧化硅界面性质的影响进行研究,利用高频和准静态C-V技术测量该界面氧化物固定电荷密度N_t和界面态陷阱密度N_it,用平面和剖面TEM分析再结晶多晶硅膜的结构特性,我们发现当衬底温度为 320℃和420℃时存在一个功率窗口 6.0～6.2W.更多还原

【Abstract】 The effect of the power of Ar⁺ laser irradiation and substrate temperature on the charac-teristics at the interface between recrystallized poly-Si film and laying SiO₂ film has been investi-gated.The density of oxide fixed charge N_f and the density of interface traps N_it have beenmeasured by C-V technique both in high frequency and quasi-static state conditions.The TEMtechnique in both plane and cross-section has been used to study the structure properties of re-crystallized poly-Si films.It has been found that the power range of 6.0 W-6.2 W is a powerwindow when the substrate temperature is kept at 320℃ and 420℃.更多还原