【摘要】 本文用俄歇电子能谱仪（AES）和X射线光电子能谱仪（XPS）研究半绝缘多晶硅（SIPOS）薄膜中硅的化学价态.通过对Si LVV俄歇谱谱线形状和位移以及Si（2p）芯态峰位移的分析,揭示了SIPOS膜是由元素Si、SiO和SiO₂组成.经过1100℃高温退火的SIPOS 膜经历了一个再结构过程——SiO₂成份增强和SiO向Si₂O₃的转变.更多还原

【Abstract】 The chemical states of Si in the SIPOS （Semi-Insulating Polycrystalline Silicon）films havebeen studied with Auger Electron Spectroscopy （AES） and X-ray Photoelectron Spectroscopy（XPS）. The analysis of the Si LVV Auger apectrum and its peak shifts and Si 2p core state peakshifts in XPS suggest that the as-grown SIPOS films contain Si,SiO and SiO₂.The annealingat 1100℃ causes a re-structure process-the increase of SiO₂ and the change of SiO into Si₂O₃.更多还原