【摘要】 本文报道了一种三维(简写为3D)CMOS集成电路制造工艺及其性能.在P型单晶硅片上制作NMOS晶体管,在连续氩离子激光再结晶的N型多晶硅膜上制作PMOS晶体管,这两层器件之间用 LPCVD生长的二氧化硅层作隔离.已制成5μm沟道长度的9级3D-CMOS环形振荡器,每级门的延迟时间为2.7ns.更多还原

【Abstract】 This paper reports a three-dimensional （3-D） CMOS IC’s technology and characteristics.N-MOS transistors have been fabricated on a p-type single crystal silicon substrate.P-MOStransistors have been fabricated in an n-type siliconon-insulator films prepared by use of CWAr⁺ laser beam recrystallization.A LPCVD SiO₂ layer is an insulator between N-MOS andP-MOS Transistors.Nine-stage 3D-CMOS ring oscillators with a 5μm channel length aremade with a propagation delay of 2.7 ns each.更多还原