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高光增益GaAs/Ga0.55Al0.45As异质结光晶体管

High-Gain GaAlAs/GaAs Heterojunction Phototransistors

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【作者】 黄小康孙宝寅孙成城薛保兴张培荣

【Author】 Huang Xiaokang/Department of Radio Electronics, Tsinghua UniversitySun Baoyin/Department of Radio Electronics, Tsinghua UniversitySun Chengcheng/Department of Radio Electronics, Tsinghua UniversityXue Baoxing/Department of Radio Electronics, Tsinghua UniversityZhang Peirong/Department of Radio Electronics, Tsinghua University

【机构】 清华大学无线电电子学系清华大学无线电电子学系

【摘要】 本文报道了具有高光增益的GaAs/Ga0.55Al0.45As异质结光晶体管的研制,并对影响器件光增益的一些因素作了讨论.实验中得到的最大光增益为3350.理论分析和实验结果均表明:减小基区宽度,降低基区掺杂浓度,提高基区内少子扩散长度,以及适当调整基区与发射区掺杂浓度之比将有益于提高异质结光晶体管的光增益.

【Abstract】 GaAlAs/GaAs HPT’s with optical gain 3350 are fabricated.Some factors whichhave effects on the gain of such devices are discussed They are consistent with the sta-tic optical gain analysis.Experimental data have shown that it is helpful for the gainto reduce the width and doping concentration of the base layer,as well as to increase theminority carrier diffusion length.On the other hand,higher gain of HPT’s could be ob-tained by adjusting the ratio of the doping concentrations between the emitter and thebase.

【关键词】 GaAs/Ga光晶体管Al基区异质结少子扩散长度集电区光探测器发射区
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1986年05期
  • 【被引频次】2
  • 【下载频次】29
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