【摘要】 本文从理论上和实验上对剪切应力对力敏电阻的压阻灵敏度影响进行了研究.在本文的分析中,取消了已往工作中对力敏电阻设计的取向限制,在计入剪切应力项作用的情况下,得到了(100)、(110),(111)圆硅膜和(100)方膜和长方膜上力敏电阻的压阻灵敏度表式.结果的解析形式及其曲线图示表明,在一般情况下,剪切应力项可以有很大的影响.为了证实这些分析的正确性,在长方形n型(100)硅膜上扩散制造了五个有不同取向角的电阻.这些电阻的压阻灵敏度对取向角关系的实验结果表明,剪切应力项的作用不可忽略.由于目前所见的关于压阻传感器的文献中都没有对剪切应力的作用足够重视,本工作的结果对力敏电阻设计提供了有用的资料.更多还原

【Abstract】 Two dimensional analyses on pizoresistive sensitivities of resistors on (100), (110),(111) square, rectangular and circular silicon diaphragms are made and both of the re-sults with and without shear stress being taken into consideration are presented and com-pared in graphic form.To verify the theoretical results,experimental devices are madeand the angular dependences of piezoresistive sensitivity of p type resistors at the cen-ter of a rectangular diaphragm are observed.The results agree with the expected curvevery well.Therefore,some of the design rules should be changed according to the pre-sent results.更多还原