【摘要】 本文研究了直拉硅单晶的氧内吸杂(IG)工艺中,单晶的碳含量对缺陷形成的影响.实验表明,碳含量较高的硅片虽然在750℃热处理时,氧的沉淀速率较高,但是经IG处理后,硅片体内仅观条到较少的缺陷.本文详细地研究了导致上述现象的原因,指出碳含量较高的硅片,在750℃处理时氧、碳同时沉淀,并以C-O复合体的形式存在.但是该类氧沉淀在高于900℃,将因分解而消失,因此对IG 硅片中缺陷的形成没有贡献.本文提供了有关实验结果,指出450℃下形成的SiO_x复合团,是IG硅片体内缺陷的主要成核部位.碳含量对低温形成SiO_x复合团的抑制作用,是高碳含量硅片在IG处理中,仅形成较少缺陷的直接原因.更多还原

【Abstract】 The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.It is found that IG defects are fewer forwafers containing higher carbon concentration, Although the precipitation rate of oxy-gen at 750℃ is higher for the same sample.During the temperature treatment at 750℃,the wafers containing higher carbon concentration appear to precipitate the oxygen andcarbon simultaneously and to form C-O eomplexes.This kind of oxygen precipitationwill be dissolved at temperatures higher than 900℃, so it does not contribute to the ge-neration of IG defects. This paper conducts some interesting results to indicate that the SiO_x complexes ge-nerated in the low temperature dominate the nucleation centers of IG defects.The re-ason for fewer defects in the IG wafer having higher carbon concentration is that car-ben impedes the generation of SiO_x complexes-the nucleation centers of IG defects-atthe low temperature.更多还原