【摘要】 对比电子辐照和氦、硼离子注入,研究了质子注入n型和P型直拉硅中产生的缺陷及其退火行为.指出我们所观察到的n型样品中的电子陷阱E（0.30）是质子注入所特有的,它很可能是与氢有关的深能级.与电子辐照对比,离子注入在E（0.41）附近引入了除双空位及磷空位以外的新的缺陷.质子注入引入的氢能使n型样品中各电于陷阱的退火温度有不同程度的降低;在P型样品中,当质子注入剂量为5 × 10¹⁰/cm²与1.5 × 10¹¹/cm²时,各空穴陷阱的退火温度降低并会聚在150℃,但当质子注入剂量大于或等于5 × 10¹¹/cm²时,注入的氢对各空穴陷阱的退火没有明显的影响.对以上现象作了分析与讨论.更多还原

【Abstract】 Defects created by proton implantation in n-type and p-type CZ silicon and itsannealing behaviours have been studied and compared with those produced by elec-tron irradiation and ionic implanting with ⁴He⁺⁺ and ¹¹B⁺⁺.It has been pointedout that the electron trap E（0.30） is only created by proton implantation in n-typeCZ-Si and related to hydrogen.In comparison with electron irradiation,a new de-fect near the energy position E（0.41） of divacancies and phosphorous-vacancy is in-troduced by ion implantation.In n-type samples,the annealing temperatures of dif-ferent electron traps are reduced by implanted hydrogen in different degree, whilein p-type samples,when the fluence of proton implantation is 5×10¹⁰/cm² or 1.5×10¹¹/cm²,the annealing temperatures of all hole traps are reduced and converged to 150℃ byimplanted hydrogen,when the fluence is higher than or equal to 5×10¹¹/cm², the im-planted hydrogen has almost no effect on the annealing temperatures of hole traps.These phenomenon have been analyzed and discussed.更多还原