【摘要】 在研制和生产硅栅MOS型（NMOS和CMOS）LSI时,用化学汽相沉积的硼磷硅玻璃（CVD BPSG）膜取代常规的磷硅玻璃（PSG）膜作回流介质层,可将回流温度降低到1000℃以下,达到800—950℃之间,因而可以把高温引发的那些不希望有的杂质扩散和各种缺陷减至最少. 本文着重介绍 CVD BPSG膜的沉积和回流特性,并初步探讨了掺杂 CVD SiO₂膜的回流机理.更多还原

【Abstract】 Chemically vapor-deposited borophosphosilicate glass （CVD BPSG） has been usedto fabricate silicon-gate MOS LSI devices （NMOS and CMOS） as fusable dielectrics.Itis shown that the BPSG layers contained 3.5-5% B and 3.5-4% P can reflow at 800-950℃ to form round and smooth tapered steps over steep steps of oxide via and polysi-licon lines,so that the subsequent deposited metal conductor lines can pass in-situ con-tinuously and do not have a reduced cross sectional area.The BPSG films are depositedby co-oxidation of SiH₄, PH₃ and B₂H₆ with O₂ in N₂ at atmospheric pressure and ap-proximately 410℃. This paper lays emphasis on The characteristics of the deposition and reflow ofCVDBPSG films,and the reflow mechanism of the doped CVD SiO₂ films.更多还原