【摘要】 本文对肖特基二极管导纳进行了理论分析,给出了肖特基二极管导纳的解析表达式.讨论了深、浅能级对肖特基二极管导纳的影响,并指出如何从肖特基二极管导纳的测量得到深、浅能级的有关参数.首次将导纳谱方法用于Si中浅杂质P、深杂质Pd和热施主的测量,得到了和其它文献一致的结果.更多还原

【Abstract】 The admittance of a Schottky diode has been studied theoretically.An analyticalexpression of admittance is given and the influence of deep and shallow energy levelson the measurement using a Schottky diode has been discussed.Experimental method tomeasure different parameters of deep and shallow levels using admittance spectroscopyis described.The results of shallow impurity P and thermal donor as well as deep im-purity Pd in Si using this method are consistent with those reported in the literatures.更多还原