节点文献
中子辐照硅单晶中一组新的红外吸收峰
A Set of New Radiation-Induced IR Absorption Bands in the Neutron-Irradiated FZ-Si Crystal
【摘要】 N型中子辐照区熔硅单晶中,在与双空位(V2-)有关的2770cm-1吸收峰的低频侧发现一组文献中从未报道过的新的吸收峰.对这组吸收峰的性质及其退火行为进行了研究.
【Abstract】 In the neutron-irradiated N-type FZ crystal,a set of new radiation-induced IR absorption bands not reported in the literature so far are observed at the low-frequ-ency side of the band 2770cm-1 related to the divacancy.The properties and the an-nealing behavior of this set of IR bands are investigated and presented.
【基金】 中国科学院科学基金
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1986年03期
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