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中子辐照硅单晶中一组新的红外吸收峰

A Set of New Radiation-Induced IR Absorption Bands in the Neutron-Irradiated FZ-Si Crystal

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【Author】 Qi Mingwei/Shanghai Institute of Metallurgy, Academia SinicaShi Tiansheng/Shanghai Institute of Metallurgy, Academia SinicaBai Guoren/Shanghai Institute of Metallurgy, Academia SinicaXie Leiming/Shanghai Institute of Metallurgy, Academia SinicaCai Peixin/Shanghai Institute of Metallurgy, Academia SinicaGao Jijin/Institute of Atomic Energy, Academia SinicaLi Shiling/Institute of Atomic Energy, Academia Sinica

【机构】中国科学院上海冶金研究所；中国科学院原子能研究所；中国科学院原子能研究所；

【摘要】 N型中子辐照区熔硅单晶中,在与双空位（V₂^-）有关的2770cm^-1吸收峰的低频侧发现一组文献中从未报道过的新的吸收峰.对这组吸收峰的性质及其退火行为进行了研究.更多还原

【Abstract】 In the neutron-irradiated N-type FZ crystal,a set of new radiation-induced IR absorption bands not reported in the literature so far are observed at the low-frequ-ency side of the band 2770cm^-1 related to the divacancy.The properties and the an-nealing behavior of this set of IR bands are investigated and presented.更多还原

【关键词】硅单晶；中子辐照；吸收峰；区熔；双空位；电子跃迁；退火温度；样品温度；双面抛光；单调下降；

【基金】中国科学院科学基金

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1986年03期

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