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两种新型的非晶半导体多层结构
Two New Types of Amorphous Semiconductor Multilayered Structures
【摘要】 利用辉光放电方法制成两种在国内外迄今未见报道的非晶半导体多层结构,即分别以超薄层a-Si:H/a-C:H和μc-Si:H/a-Si:H作为重复单元的多周期重复结构.样品的断面透射电镜分析显示了明晰的层间界面状况以及各子层的平整性和均匀性.由光吸收测量观察到a-Si:H/a-C:H结构中a-Si:H吸收边的“兰移”,将此现象归结为量子尺寸效应.
【Abstract】 Two new types of amorphous semiconductor multilayered structures consisting of repeat units of a-Si: H/a-C :H and μc-Si:H/a-Si:H, repeatively,have been preparedby rf plasma deposition in a single-chamber plasma reactor, to which so far no reporthas referred.TEM studies indicate that the interfaces between the sublayers arevery sharp,and that the layers are smooth and uniform.The observed blue shift ofthe optical absorption gap of a-Si:H in the a-Si:H/a-C:H multilayered structures isdescribed as a quantum size effect.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1986年03期
- 【被引频次】2
- 【下载频次】20