节点文献
1.3微米InGaAsP/InP双沟道平面掩埋异质结激光器
1.3μm InGaAsP/InP Double-Channal Planar Buried Heterostructure Lasers
【摘要】 用过冷法两次液相外延生长制作了波长 1.3微米InGaAsP/InP双沟道平面掩埋异质结激光器(DC-PBHLD).室温最低阈值电流15mA,典型值20mA;最高连续工作温度80℃,输出光功率2mW.4倍阈值电流时,仍可得到稳定的单纵模输出.
【Abstract】 1.3 μm InGaAsP/InP double-channal planar buried heterostructure lasers have been fabricated with supper-cooling growth technique by a two step LPE growth pro-cess.Minimum threshold current of the lasers at room temperature is 15mA and thetypical value is 20mA.The highest CW operation temperature is 80℃ and the out-put pQwer is 2mW.The output stable single longitudinal mode is obtained at four ti-mes of threshould current.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1986年03期
- 【被引频次】3
- 【下载频次】78