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液相外延空白区现象的观察

Observation on the Phenomena of "Liquid Phase Epitaxy-free Region"

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【作者】 周伯骏

【Author】 Zhou Bojun/Institute of Semiconductors, Academia Sinica

【机构】 中国科学院半导体研究所

【摘要】 在某些衬底上生长薄外延层时发现有局部未长外延层的区域——“外延空白区”,它会影响外延层的均匀性.由于这类空白区中心附近总有凹的破损区域或有异样结构,这必然会产生应力,可推断“外延空白区”与晶格缺陷产生的应力有关.用故意在衬底表面的局部区域产生划痕,或进行离子注入,或产生离解等办法造成晶格缺陷,产生应力,同样得到了“外延空白区”,证明了我们推断的正确.由此提示我们为得到高质量的薄外延层需要注意选择无局部应力集中区域的衬底。

【Abstract】 Epitaxy-free region,a region short of epitaxial growth,is found to have an effectin the layer’s homogeneity during the growth of thin epitaxial layers on certain subst-rates.Due to the stress resulting from the concave faulty region or anomaly around thecentre of such epitaxy-free region,it is inferred that the epitaxy-free region is relatedto the stress from the lattice defects."Epitaxy-free region" can be obtained purposelyin different ways such as through scratches,ion implantation or dissociation on certainparts of the substrate surface leading to lattice defects and stress.It indicates the cor-rectness of our inference and this calls our attention to selecting substrates without anypart of concentrated stresses in order to obtain high quality thin epitaxial layers.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1986年01期
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