【摘要】 研究表明扩Cu与热处理GaAs 中都存在的1.36eV发光峰,起源是不同的.前者主要与Cu_Ga有关,而后者主要与V_Ga有关.首次观察到在同样的温度下扩Cu的与热处理的GaAs（未掺杂）样品,经H等离子体处理后,在扩Cu样品中,在1.41eV附近出现了一个新的发光峰,而在热处理的样品中却不存在此峰.1.41eV发光峰所对应的发光中心可能是H与Cu形成的复合体.更多还原

【Abstract】 Experiments show that in both GaAs diffused with copper and GaAs heating treat-ment a photolnminescence peak locating at 1.36 eV appears.In the former species thepeak mainly relates to Cu_Ga,and in the latter species it mainly relates to V_Ga. Afterundoped GaAs samples are diffused with copper and heated at same temperature, thehydrogen is introduced from a low pressure plasma source.In the samples diffusedwith copper an emission peak locating at 1.41 eV is observed for the first time, but inthe samples heated this peak is not observed.The photoluminescence center correspond-ing to 1.41 eV is probably the complexes composed of H and Cu.更多还原