【摘要】 本文提出在MOSFET构成的2DEG带尾区域,复值电容可用三个模型予以描述.一维扩散模型(IDD),迁移率边模型(ME)和复数电导率模型(σ(ω)).利用器件的分散结构参数和物理模拟推导了三种模型的表达式.理论和实验作了比较.说明了理论结果在态密度函数测量中的应用. 预期这三个模型也可应用于量子化情况自旋分裂,谷分裂和朗道分裂的谷区电子导电边的情况.更多还原

【Abstract】 The paper presents three models to describe the complex capacitance of MOSFETinversion layer 2DEG in subband tail region:one dimension model (1 DD), mobilityedge model (ME),and complex conductance model (R(ω)).The expressions are deriv-ed.The measurement results are compared with the models.The application of theresults in state density investigation of 2DEG is discussed briefly.It is predicted thatthese models can be also used to the electron edge of valley region of Landau splitting,spin splitting and valley splitting.更多还原