【摘要】 <正> 无定形硅(a-Si)在制造大面积的廉价太阳能电池方面有着光明的前景.特别是用硅烷分解的辉光放电工艺(GD),由于在工艺过程中引入了氢而降低了局域态密度,使得所制备的GDa-Si 更具有实用意义,而成为廉价太阳能电池商品生产的主要工艺.为了提高GDa-Si 太阳能电池的转换效率和降低生产成本,对其光学性质进行深入的研究是很有意义的.对于溅射工艺制备的a-Si,前人曾分别用椭圆偏振光谱法、吸收光谱法及透更多还原

【Abstract】 The optical properties of GDa-Si have been measured with TPP-1 spectro-scopic ellipsometer.The relations for n-λ、α-λ、ε₂-λ,and the optical band gap E（?）,the gap state density N_s of GDa-Si have been obtained.The results are as foll-ows:1) In a wavelength range from 2800（?） to 6000（?）,there is only a peak in the ε₂-λcurve for amorphous silicon,but there are two peaks in the ε₂-λ curve for singlecrystalline silicon.2)The n-λ curve and the α-λ curve for GDa-Si shift upwardwith the substrate temperature increasing.3) The optical band gap E₀ for GDa-Sidecreases and the gap state density N_s for GDa-Si increases with the substratetemperature increasing.更多还原