【摘要】 本文描述1MeV电子辐照GaP（N）LED中辐照缺陷及其对光电性质的影响。用EL光谱、CL光谱和光电流谱等为研究技术,发现电子辐照使发光效率显著降低,并产生新的辐射中心,证明发光效率的降低是由于辐照产生大量无辐射复合中心和某些辐射复合中心对能量的耗散作用。分析了这些缺陷中心的本质。指出GaP（N）LED中V_Ga和残存氧原子是特别有害的杂质和缺陷。更多还原

【Abstract】 Irradiated defects and its influence on the optical-electronic properties in 1 MeV electron-irradiated Gap(N)LED were investigated by using EL spectrum, photocurrent spectra and CL analysis. A new radiation center was found in irradiated Gap(N)LED. It was shown that the luminescence efficiency is decreased due to the presence of the non-radiation centers and partly due to the energy dissipation effect for some radiation centers in the irradiated samples. The nature of the defect centers was analyzed as well. Finally, we point out that VGu and some residual oxygen atoms are unfavourable defects and impurities, respectively.更多还原