【摘要】 本文提出用三氯乙烯氧化剥层的方法,对硅外延层微缺陷进行吸除处理,并同其它吸除方法作了实验比较及分析讨论,表明这是吸除效果、可靠性和实用性都较好的方法。更多还原

【Abstract】 This paper presents the method of stripping the ozide layer including C₂HCl-3 for the gettering process of microdefects in the silicon epitaxial film.Itsexperimental comparison with other methods as well as its analysis are made.The re-salts show that this method is better than others in gettering effect,reliability andpracticality.更多还原