【摘要】 本文利用铅系玻璃、锌硼硅玻璃等四种不同组分的玻璃材料,对P~+-P-N结构的硅器件表面进行玻璃钝化的试验研究。用V-I法对玻璃钝化器件测试。玻璃钝化结果表明,1~#铅系玻璃可使器件常温下的阻断能力达到1800伏;含少量氧化铅的4~#锌硼硅玻璃钝化的器件表面,获得在150℃高温下具有稳定的高温阻断特性。对电泳涂层方法作了初步探讨。更多还原

【Abstract】 This paper deals with, silicon semiconductor device surface of P~+ -P -N structure for glass passivation, with four dif ferent frits such, as lead-silicate glass and zinc oxide-borosilicate glass etc. The glass passivated devices are measured by voltage-current (V-I) method. The experimental results of glass passivation indicates that No. 1 lead-silicate glass enables devices to obtain a reverse interception voltage of 1800V under "the normal temperature and No.4 zinc oxide-borosilicate glass containing a few of lead oxide enables devices to obtain stable interception performance of higher temperature up to 150℃. The prelizninary study of electrophoretic coating method is also presented.更多还原