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多晶n—CdSexTe1-x光电极的制备及其光电化学行为的研究
Preparation of Polycrystalline n-type Semiconductor n-CdSexTe1-xPhotoelectrode and a Study of Its Photoelectrochemical Behaviour
【摘要】 本文采用恒电位共沉积法制备CdSexT1-x固溶体光电极,探讨了影响电沉积和热处理的各项因素。在所选定的条件下制成的固溶体光阳极为n型,成分x=0.66,禁带宽度E9=1.56eV,平带电位■fb=1.38V(v·s·SCE),电极经修饰后,其PEC电池的光电转换效率达5.1%。
【Abstract】 In this paper the preparation of solid solution CdSeXTe1-X photoelectrode bypotentiostatic co-deposition method is described,and the various factors affecting theelectrodeposition and annealing processes are investigated.The solid solution photoanodemade under selected conditions is of n-type.The value x in CdSeXTe1-X equals 0.66the forbidden band enery Eg=1.56ev,the flat band potential （?）fb=-1.38V（v.s.SCE）The photoelectric transformation efficiency of the electrode after Zn2+ modificationreaches 5.1%.
- 【文献出处】 上海交通大学学报 ,Journal of Shanghai Jiaotong University , 编辑部邮箱 ,1985年06期
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