【摘要】 <正> （一） 引言据近几年有关报道,在高RF功率下淀积α—Si:H膜可获得高的电导率。Sanyo小组用SiH₄在高RF功率下淀积n型掺杂α—Si:H膜的特征,暗电导率达2.9（Ω·cm）^-1,激活能达0.02eV。人们认为这种α—Si:H膜的电导率的提高是由膜的部分晶化引起的,即具有微晶结构。国际上已有人采用这种部分晶化的膜作欧姆接触和窗口材料做成了效率较高的α—Si:H太阳电池。这种新型的α—Si:H膜必将在其它技术上得到重要应用。更多还原

【Abstract】 Heavily N-doped microcrystalline-amorphous Si:H films have been prepared by glow discharge decomposition of silane. A room-temperature conductivity as high as 35Ω^-1cm^-1 with an activation energy of 0.011eV has been obtained. The optical gap of the films is about 1.7eV. X-ray al diffraction measurements show that the film structure is of a microcryst line-amorphous mixture. From our experimental results it is found that the higher the rf power is, the greater the number of microe-crystallites is, and the crystalline volume fraction is increased accordingly.更多还原