【摘要】 本文将Andrew对水平基座的矩形反应器的速度分布和质量输运的分析推广到有小角度的倾斜基座反应器上,计算了不同倾角时各截面的速度分布,分析了外延层厚度均匀性、基座宽度利用率与反应器几何参数之间的关系。最后通过引入质量输运系数校正因子,计算了倾斜基座上纵向生长速率,分析和计算结果与生产中的测试结果基本吻合。更多还原

【Abstract】 In this paper the velocity profile and mass-transport in a rectangular reactor for the epitaxial growth of Si from SiCl₄ in H₂ by CVD, are studied. We extend Andrew’s results about horizontal susceptor to small tilted angle susceptor. We also introduce a correct factor of mass-transport coefficient to evaluate the growth rate of silicon along the tiled susceptor. Our results is in agreement with the experimental results.更多还原