【摘要】 研究了等离子体工艺参数对射频辉光放电沉积的a-Si:H膜中氢的键合状态的影响及氢在退火时的释放机理。结果表明:可以通过不同的制备条件(特別是等离子体压力)控制a-Si:H膜中氢的键合状态。提出了以空间氢聚团模型解释在a-Si:H膜的退火过程中氢的释放机理。更多还原

【Abstract】 The effect of preparation parameters on the nature of hydrogen bond in a-Si:H films prepared by r. f. glow-discharge plasma deposition is studied. Also, the release mechanism of hydrogen from a-Si:H films during annealing is discussed. It is found that the nature of hydrogen bond in a-Si: H films can be controlled by varying the preparation parameters, especially the plasma pressure. Concerted hydrogen model is suggested by the authors to explain the mechanism of release of hydrogen from a-Si:H films during annealing.更多还原