【摘要】 本文提出了液相外延生长硅单晶薄膜的工艺,选择Sn为熔剂,在950℃的温度下等温液相外延生长了掺锑的型硅单晶薄膜,扫描电子显微镜观察表明生长的膜厚度比较均匀,膜与基片的边界比较明显,试验的结果表明与国外发表的工作较好地一致。更多还原

【Abstract】 The technology of the liquid phase epitaxy growing silicon single cry-stal thin layer is described in this article N-type silicon single crystalthin layers doped with Sn have been grown by isothermal liquid phaseepitaxy technique at 950 c Scaning electron microscope observation showthat the thickness of the layer grown by this method is homogeneousinterface between fhe layer and the substrat is distinct, The experimentalresuuets are good agreement with the works reported by other authors更多还原