【摘要】 掺氧多晶硅薄膜作为钝化膜已成功地应用于半导体器件.为了适应器件制造过程中的高温热处理,有必要探讨膜的高温热退火物理效应.本文从薄膜的腐蚀速率、膜的厚度以及膜的折射率随不同退火温度的变化,显示了掺氧多晶硅薄膜经高温退火的致密效应.而从膜的红外吸收谱测量表明膜中含氧量基本不变,但Si-O键吸收峰随着退火温度的升高向高频方向移动,并且愈益接近SiO₂的红外吸收谱.由此说明高温热退火使无定形的生长层薄膜再结构为Si多晶颗粒和SiO₂.使膜中SiO₂成份随着退火温度升高也跟着增加.更多还原

【Abstract】 Here, through the measurements of etch rate, film thickness and refractive index of films, it is shown that the oxygen-doped polycrystalline silicon films have been densified with high temperature annealing.Moreover, infrared spectra of films shows a stable oxygen content and a shift of Si-O band absorption peak to higher frequency with increasing annealing temperature.After high temperature annealing, the infrared spectrum of film is resemble with that of SiO₂.It is concluded that the as-deposited film is reconstructed into polycrystalline grains and SiO₂ during heat annealing, and the SiO₂ component increases with the annealed temperature.更多还原