【摘要】 观察了提拉法生长钆镓石榴石的晶体缺陷。主要研究位错及其攀移、蜷线位错、位错环和包裹物。棱柱位错环和攀移位错环可存在同一晶体中。攀移位错环和蜷线位错可分两类:各对应于吸收间隙原子的攀移和微细沉淀粒子在位错处反复成核成长这两种攀移生长机制。更多还原

【Abstract】 Defects(dislocation, inclusion, core) in GGG grown by Czochralski method have been studied with emphases on dislocation and its climb, different kinds of helical dislocations and dislocation loops around Ir inclusion and Gd Ga suboxide. Both climbing and prismatic dislocation loops have been found in the same wafer, and two types of climbing loops and helices, corresponding to the mechanisms of the climb motion for absorbing interstitial atoms and of repeated nucleation of small precipitates where dislocation occurs, have been observed in different GGG boules. Three dimensional figures of climbing dislocation loops and helices composed of dislocation etch pits, etch lines and dislocation lines in the interior of the crystal have been revealed on the etched wafer, so the climbing, slipping, interaction of dislocation and secondary climbing in dislocation can be observed.更多还原