【摘要】 本文报道了利用Ar~+激光器和HCD灯进行的ArⅡ光电流效应的实验研究。给出了496.5nm,476.5nm,514.5nm光电流效应的实验数据。考虑到离子的电离和复合等过程的竞争效应,提出了一个简化的模型,很好地解释了实验结果。提出了利用离子光电流效应研究某些气体放电等离子体参数的可能性。更多还原

【Abstract】 An experimental investigation of the optogalvanio effect of ArII in an HOD lamp by using an Ar+ laser, with its Ising line at 514.5nm, 496.5nm, and 476.5nm separately is reported. By considering various effects, such as ionization, recombination, and other mechanism of excited ions, we propose a simplified model which can be used to explain experimental results satisfactorily. The possibility of measuring some parameters of discharge plasmas in low-possibility of measuring optogalvanio effect is also suggested.更多还原