节点文献
Al_xGa(1-x)As LPE掺杂机理研究
A Study of Incorporation in AlxGa1-xAs LPE
【摘要】 本文将D.T.J.Hurle的点缺陷平衡模型推广到三元Ⅲ-V族化合物.从理论上计算了Sn、Ge和Te等元素掺杂AlxGa1-xAs时,载流子浓度与液相杂质浓度的关系曲线.计算结果与实验值相符.
【Abstract】 The point defect model that D. T.J. Hurle advanced is extended to the ternary Ⅲ-V compounds. The carrier concentration as a function of liquid mole fraction of impurity and χAlAs is calculated in Sn, Ge, and Te doped AlχGal-χAs, respectively.All the calculations are compared with the experimental results with good agreement.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1985年04期
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