节点文献
离子注入GaAs MESFET中深能级
Deep Levels in Ion Implantation GaAs-MESFET
【摘要】 本文介绍由DLTS法检测离子注入GaAs MESFET结构中深能级陷阱的结果,并且从实验上观测了这些陷阱能级与器件某些特性的直接联系.
【Abstract】 This paper describes deep levels in ion implantation GaAs-MESFET, these has been detected by DLTS method, direct relationship between some levels and certain characteristic of devices has been odserved from experiments.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1985年03期
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