【摘要】 本文通过对正面光照型（由p⁺-InGaAs层注入光子）和背面光照型（由n⁺-InP层注入光子）两种结构的比较,讨论了高性能正面光照型InGaAs PIN光电二极管的设计原则和理论模型.重点分析了器件反向I-V特性、量子效率、脉冲响应时间等问题.所研制的器件性能如下:在工作偏置V_op=-5V时,暗电流密度J_D=2.5×10^-6A/cm²;结电容C_j=0.7pF;量子效率η=85%（λ=1.3μm）;脉冲响应时间△τ=100ps更多还原

【Abstract】 In this paper, the front illuminated (the photons are injected into a p+-InGaAs Layer) and the back illuminated (the photons are injected into a n+-InP Layer) Structures are compared. The design principle and theory mode of the front illuminated InGaAs PIN photodiodes are discussed. The inverse I-V charac-teristic, the quantum efficiency and the pulse responce time are analyzed. The performances of the prepared devices are as follow, operation bias Vop =-5V, dark current dencity JD = 2.5×10-6A/cm2, junction capacitance Cj = 0.7pF, quantum efficiency η=85%(λ= 1.3μm), pulse responce time △τ= 100ps.更多还原