【摘要】 用液相外延技术生长的外延片,制成了SiO₂条形限制的InGaAsP/InP边发光管,100mA下光功率1mW,最高值1.3mW,发射波1.31μm,半宽860A。研究了外延材料特性（如p-n结位置,有源层厚度和浓度）对器件光功率,光谱特性,和Ⅰ-Ⅴ特性的影响。有源层厚度（d）对光功率和光谱半宽有重要影响,p-n结不偏位的器件,光谱特性为单一的长波长发射蜂,具有正常的Ⅰ-Ⅴ特性。p-n偏离有源层的器件,光谱特性除长波长发射峰外,尚有9700A的InP发射峰,其Ⅰ-Ⅴ特性具有异常特性,导通电压>0.9V。更多还原

【Abstract】 InGaAsP/InP edge-emitting LED’s are capable of high coupling efficiency, winder tandwidth and narrower spectral halfwidth. In this paper,the characteristics of InGaAsP/InP edge-emitting LED’s are described. The four-layer InGaAsP/InP DH wafers used for fabrication of the EELED’s were grown by LPE technique. They are a 4-5μm n-type Inp buffer layer, an un-doped InGaAsP/InP active layer whose thickness varies from 0.2μm to 0.8μm; a p-InP confining layer and a Zn-doped cap layer,respectively. The position of p-n junction and concentration profile of wafers.The InGaAsP/InP edge-emitting LED’s have been fabricated.The output power of the devices is about lmW(at 100mA),the emitting wavelength A is 1.3μm and the spectral halfwidth is about 860A. The dependence of characteristics of devices on material property has been investigated. The output power (P) increases as the active layer thickness(d)decreases.But the concentration of acceptor of the active layer changing from 4×1017cm-3 to 1×1018cm-3 has no effect on the output power of the devices. The far-field patterns in plane perpendicular to the junction exhibit asymmetry and its shape is changed with the excited current.When the p-n junction is in the active layer of wafers,the devices have a normal I-V characteristic,higher output power and a emitting peak of the wavelength 1.3μm,When the p-n junction is misplaced and departed from the active layer,the devices have an anomalous I-V characteristic,two emitting peaks of wavelength at 0.9μm and 1.3μm and lower output power. This characteristic is similar to the InGaAsP/InP surface-emitting LED’s.更多还原