【摘要】 本文研究了电子束光刻中电子能量（10—30keV）和电荷剂量(10^-6—10^-3C·cm^-2)对铝栅MOS电容器的损伤和低温退火（<500℃）的影响。研究电子束光刻中高能量（30keV）和高剂量(10^-3C·cm^-2)电子束引起的损伤,对电子束汽相显影光刻和电子束无显影光刻是有实际意义的。实验表明,平带电压的损伤可高达十几伏,界面态密度可高达10¹²cm^-2eV^-1以上。在一定电荷剂量下,平带电压的损伤对电子能量的变化（在一定范围内）不敏感。在一定电子能量下,界面态密度的损伤对电荷剂量的变化（在一定范围内）不敏感。低温（<500℃）退火能完全消除平带电压的损伤,但不能完全消除界面态密度的损伤。更多还原

【Abstract】 The irradiation damages to Al gate MOS capacitors in electron beam lithography (EBL) and the effects of annealing on damages at low temperature (<500℃) are given. The degrees of damages depend on the eleetron energies (10-30keV) and the charge dosages (10-6-10-3C·cm-2). The research on the effects of high energy (30keV) and large dosage (10-3 C·cm-2) on damages is important and useful to EBL with vapor development and without devolopment. The damages of concentrations of interface states can reach one to two orders of magnitude. Under constant charge dosages, the damages of flat-band voltages are independent of the variations of the eleetron energies in certain energy ranges; and under constant electron energies, the damages of concentrations of interface states are independent of the variations of charge dosage in certain dosage ranges. The annealing can eliminate the damages of the flat-band voltages, but can not eliminate completely the damages of the concentrations of the interface states.更多还原