【摘要】 用改进了的射频溅射仪,在GaAs/GaAlAs DH面发光管的窗口上沉积一层厚度近于λ/4的Al₂O₃抗反射层后,其输出光功率增高了30—66％。而在相同涂层条件下,退化发光管输出光功率的提高则不到30％,这可能与其体内形成缺陷有关。更多还原

【Abstract】 A modified conventional RF sputtering equipment was used in preparing the Al2O3 antireflectrve coating (ARC). An increase in the light power output of 30-66% at a driving current 200 mA for the GaAs/GaAlAs DH LEDs coated on light emitting sur-face with ARC thickness of about λ/4 has been obtained. In the same case a light output increase of less than 30% for these degraded LEDs has been determined. It may pro-bably be attributed to the defects formed in the bulk of the Ga1-x AlxAs crystals caus-ed by degradation of diodes restrict the increase of light output.更多还原