【摘要】 利用国产MBE系统外延生长的调制掺杂材料,试制出选择性掺杂晶体管或高电子迁移率晶体管(HEMT)。准增强型器件的跨导为60～90mS/mm。有些器件发现有负阻,跨导达190mS/mm。更多还原

【Abstract】 Selective doped heterojunction transistor or high electron mobility transistor is fabricated with modulation doping material grown by a home-made MBE system. The transconductance for quasi-enhan-cement-mode devices is 60-90 mS/mm. Large negative conductance is observed with a corresponding trans-conductance of about 190 mS/mm.更多还原