【摘要】 本文采用X射线衍射方法测定了在(001)取向的InP衬底上,用LPE法生长的InGaAsP外延层晶格完整性和应变状态,给出了InGaAsP/InP异质结X射线回摆曲线测量方法和测量结果,提出了用普通X射线衍射仪测量外延层晶格失配在实验方法上的改进,从而提供了在没有双晶衍射仪情况下,测量外延层晶格失配的可行途径。更多还原

【Abstract】 X-ray diffractometry is used to determine the crystal perfection and state of the strain in InGaAsP epitaxial layers grown on (001) oriented InP substrate. The methods and the results of measurement of rocking curves in the InGaAsP/InP heterojunction are given. The improvements of measurement of lattice mismatches by means of X-ray diffractometry are presented, so that one can determine the lattice perfection of epilayers without double-cyrstal spectrometer.更多还原