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氧对a-Si:H光诱导效应的影响

Influence of Oxygen on the Photo-induced Effect in a-Si:H

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【作者】 章熙康王缨白国仁江绵恒王其闵

【Author】 Zhang Xi-kang, Wang Ying, Bei Guo-ren, Jiang Mian-heng, Wang Qi-min (Shanghai Institute of Metallurgy, Academia Sinica).

【机构】 中国科学院上海冶金所中国科学院上海冶金所

【摘要】 研究了氧掺杂对a-Si:H光诱导Staebler-Wronski效应的影响(随着掺氧量的增加,光诱导效应减弱)。在掺氧的a-si:H中,红外吸收光谱显示出氧原子主要作为氢原子附近的弱Si-Si键的桥键原子。吸收系数和光子能量的关系表明有Urbach吸收边存在,且微量氧将使a-Si:H网络的无序度降低。同时,光照大大促进桥键氧原子的耦合,弱Si-Si键被打断。因此,掺氧的a-Si:H膜的Staebler-Wronski效应减弱是由于微量氧原子稳定了弱Si-Si键的缘故。

【Abstract】 The photo-induced conductance change decreases with the increase in oxygen content in the a-Si:H films. The IR absorption spectra show that in oxygen-doped a-Si:H Films, oxygen atoms serve as bridging atoms in the Si-Si weak bonds. The analysis of absorption data indicates that a small amount of oxygen can reduce the disorder of a-Si:H networks. In addition, illumination promotes the coupling of bridging oxygen atoms, suggesting that the Si-Si weak bonds are broken by photons during illumination. From the experimental results it is concluded that oxygen atoms stabilize the weak bonds and thus reduce the photo-induced conductance change.

  • 【文献出处】 电子学报 ,Acta Electronica Sinica , 编辑部邮箱 ,1985年02期
  • 【被引频次】1
  • 【下载频次】38
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