【摘要】 通过红外吸收测量、带电粒子活化分析及腐蚀后的金相观察,证实了经三步热处理退火后的CZ硅片,表面层氧外扩散而形成“清洁区”,体内氧沉淀形成高密度的缺陷区。采用中子活化、C-T测量、p-n结试验等技术,证实了氧本征吸除的吸杂效果。更多还原

【Abstract】 The variation of the state of oxygen in CZ silicon wafer and the distribution of precipitate are studied by infrared absorption measurement, charged-particle analysis and etching metallographic examination. The effect of oxygen intrinsic gettering is proved by some analytical methods such as C-T measurement, neutron activate analysis and.p-n junction test.更多还原