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扩散Nb3Sn薄膜中晶界的TEM研究
A TEM STUDY OF GRAIN BOUNDARY IN DIFFUSION Nb3Sn FILM
【摘要】 Nb3Sn层中的晶界是影响临界电流的重要微结构因素.对扩散Nb3Sn薄膜的TEM研究表明有尺度分别在103A与102A的两种大小不同的晶粒.很大面积的叠栅条纹证明有与扩散方向大体上正交的大量晶界.其中,取向差20°的大角度扭转晶界给出间距小到15A的极细密叠栅条纹.初步讨论了这种晶界形成的可能原因.
【Abstract】 Grain Boundary (GB) is an important microstructual factor for critical current.TEM study of diffusion Nb3Sn film shows that there exist two categoris of grains sibedabout 103A and 102A respectively. The abundance of large area Moire fringes displas avast amount of GB nearly normal to the diffusion direction. In particular, the large angle(~20°) twist boundary produces fine fringes with space 15 A. Possible origin of suchkind of GB has been discussed.
- 【文献出处】 低温物理 , 编辑部邮箱 ,1985年04期
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