【摘要】 用氨气对热生长的二氧化硅膜进行了氮化处理,测试了膜的电学特性,并研究了工艺对它们的影响。实验发现,热氮化二氧化硅膜兼有二氧化硅与氮化硅膜的优点,而且界面电荷在较大范围内具有可控的特点。用AES表面分析技术研究了热氮化二氧化硅膜的结构。还探讨了二氧化硅膜热氮化的机理。更多还原

【Abstract】 Thermal SiO₂ films were thermally nitrided in anhydrous NH₃. The electrical characteristics of the resulted films were measured and the infuences of the technological conditions were investigated. The experiment₃ showed that thermally nitrided SiO₂ film had both the advantages of SiO₂ and Si₃N₄. Its interface charge may be controled by the nitridation condition in larger range. The structure of the films was analyzed byz the surface analysis method of AES. The machanism of the thermal nitridation of SiO₂ film was discussed.更多还原